Accession Number : ADD017453

Title :   Thin-Film Edge Field Emitter Device and Method of Manufacture Therefor.

Descriptive Note : Patent, Filed 31 Mar 93, patented 17 Jan 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gray, Henry F ; Hsu, David S

Report Date : 17 Jan 1995

Pagination or Media Count : 16

Abstract : Thin-film edge field emitter devices are provided which are capable of low voltage operation. The method of manufacture of the devices takes advantage of chemical beams deposition and other thin-film fabrication techniques. Both gated and ungated devices are provided and all of the devices include a plurality of thin-films deposited on the side-wall of a non-flat substrate. The gated emitter devices include alternating conductive and electrically insulating layers, and upper parts of the latter are removed to expose the upper edges of the conductive layers, with a central one of these conductive layers comprising an emitter for emitting electrons. The emitter devices can be inexpensively produced with a high degree of precision and reproducibility without the need for expensive lithographic machines. The devices can be used in field emitter arrays employed as vacuum transistors, vacuum microelectronic analog and digital devices, and modulated or cold electron sources. (AN)

Descriptors :   *THIN FILMS, *MICROELECTRONICS, *PATENTS, DIGITAL SYSTEMS, LOW TEMPERATURE, LOW COSTS, LAYERS, VACUUM, GATES(CIRCUITS), FABRICATION, SUBSTRATES, ELECTRICAL CONDUCTIVITY, LITHOGRAPHY, ELECTRON EMISSION, LINEAR ARRAYS, EMITTERS, REPRODUCIBILITY, ANALOG SYSTEMS, FIELD EQUIPMENT, LOW VOLTAGE, TRANSISTORS, ELECTRICAL INSULATION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE