Accession Number : ADD017586

Title :   Ultra-High Vacuum/Chemical Vapor Deposition of Epitaxial Silicon-on-Sapphire.

Descriptive Note : Patent, Filed 3 May 94, patented 4 Apr 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Sexton, Douglas A ; Walker, Howard W

Report Date : 04 Apr 1995

Pagination or Media Count : 5

Abstract : A method of fabricating epitaxial thin films, such as doped films or silicon-on-sapphire films, relies upon ultrahigh vacuum vapor deposition. The method calls for a preparing of an ultrahigh vacuum chamber to reduce water and oxygen pressure to below 10(exp -10) Torr. At at least one sapphire substrate is placed in the ultra high vacuum chamber and is purged in the chamber with about 600 sccm hydrogen for about 5 minutes. A silicon film or a doped film is deposited on the sapphire substrate at temperatures between about 700 and 850 deg C. with base pressures between about 1.0 and 2.0 microns and gas flow rates of about 2.0 sccm SiH4 and 20 sccm H2 for about 30 minutes to provide an about 1000 A thick silicon film, or, doped film, on the sapphire substrate. jg p.1

Descriptors :   *CHEMICAL VAPOR DEPOSITION, *EPITAXIAL GROWTH, *SAPPHIRE, *SILICON, *ULTRAHIGH VACUUM, HYDRIDES, WATER, THIN FILMS, FILMS, VAPOR DEPOSITION, SUBSTRATES, VACUUM CHAMBERS, HYDROGEN, OXYGEN, FLOW RATE, PRESSURE, DOPING, THICK FILMS, GAS FLOW, BASE PRESSURE

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE