Accession Number : ADD017608

Title :   Intrinsically Doped III-A and V-A Compounds Having Precipitates of V-A Element.

Descriptive Note : Patent, Filed 12 Apr 94, patented 30 May 95

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Twigg, Mark E ; Fatemi, Mohammad ; Tadayon, Bijan

Report Date : 30 May 1995

Pagination or Media Count : 5

Abstract : An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal. jg p.1

Descriptors :   *GROUP III COMPOUNDS, *GROUP V COMPOUNDS, *DOPING, *PATENTS, *PRECIPITATES, METALS, CRYSTAL STRUCTURE, HIGH RATE, CONDUCTIVITY, HIGH TEMPERATURE, SINGLE CRYSTALS, AMORPHOUS MATERIALS, SEMICONDUCTORS, GASES, HEATING, TABLES(DATA), ATMOSPHERES, RARE GASES

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Properties of Metals and Alloys
      Crystallography
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE