Accession Number : ADD017610

Title :   Method of Controlling Photoemission from Porous Silicon Using Ion Implantation.

Descriptive Note : Patent, Filed 9 Sep 93, patented 30 May 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Russell, Stephen D ; Dubbelday, Wadad B ; Shimabukuro, Randy L ; Szaflarski, Diane M

Report Date : 30 May 1995

Pagination or Media Count : 7

Abstract : This invention describes a method of controlling light emission from porous silicon and porous silicon devices using ion implantation. The emitted light intensity can be either selectively increased or decreased by suitable processing of the silicon prior to the fabrication of the porous layer. Amorphizing the silicon prior to the fabrication of the porous layer quenches the light emission. Ion implantation with doses below the amorphization level enhances the intensity of the emitted light of the subsequently fabricated porous layer. jg p.1

Descriptors :   *ION IMPLANTATION, *PHOTOELECTRIC EMISSION, *SILICON, *POROUS MATERIALS, *PATENTS, EMISSION, LAYERS, PROCESSING, LIGHT, DOSAGE

Subject Categories : Inorganic Chemistry
      Electrooptical and Optoelectronic Devices
      Laminates and Composite Materials
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE