Accession Number : ADD017616

Title :   Method of Fabricating Sub-Half-Micron Trenches and Holes.

Descriptive Note : Patent, Filed 20 Sep 93, patented 30 May 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Hsu, David S

Report Date : 30 May 1995

Pagination or Media Count : 22

Abstract : This patent discloses a non-optical method for the formation of sub-half micron holes, vias, or trenches within a substrate. For example, a substrate having at least two buttresses or a trench having an interbuttress distance or a width of 1.0 to 0.5 microns, respectively, is conformally or non-con. formally lined with a layer material. Thereafter, the layer material from horizontal surfaces is removed to expose the substrate underneath while leaving the layer material attached to the essentially vertical walls of the buttresses or the trenches essentially intact, thereby, narrowing the interbuttress distance or the trench width, respectively, to subhalf micron dimensions. The exposed substrate surface is then subjected to anisotropic etching to form sub-half micron trenches, holes or vias in the substrate. Finally, the buttresses and layer material are removed from the substrate. Alternatively, a template of buttresses or channel glass having openings, lined with layer material, on the order of sub-half micron widths is placed on a substrate prior to anisotropic etching to form sub-half micron holes, vias or trenches within the substrate. The template is then removed leaving a substrate surface containing sub-half micron trenches, holes or vias. The template structure once made can be used repeatedly. (MM)

Descriptors :   *CHIPS(ELECTRONICS), *SUBSTRATES, *PHOTORESIST COATINGS, *ETCHING, *MICROELECTRONICS, *PATENTS, ULTRAVIOLET RADIATION, THIN FILMS, SEMICONDUCTORS, GLASS, TRENCHES, HOLES(OPENINGS), SILICON, TEMPLATES, WAFERS, PHOTOLITHOGRAPHY

Subject Categories : Electrical and Electronic Equipment
      Printing and Graphic Arts

Distribution Statement : APPROVED FOR PUBLIC RELEASE