Accession Number : ADD017622
Title : Lower Bandgap, Lower Resistivity, Silicon Carbide Heteroepitaxial Material, and Method by Making Same.
Descriptive Note : Patent Application, Filed 17 Jan 95,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Kelner, Galina ; Spencer, Michael G ; Dmitriev, Vladamir A ; Irvine, K
PDF Url : ADD017622
Report Date : 17 Jan 1995
Pagination or Media Count : 12
Abstract : A silicon carbide semiconductor material, and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 12OO C or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.
Descriptors : *PATENT APPLICATIONS, *EPITAXIAL GROWTH, *SEMICONDUCTOR DEVICES, LAMINATES, HETEROJUNCTIONS, REDUCTION, ELECTRICAL RESISTANCE, SILICON CARBIDES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE