Accession Number : ADD017642

Title :   Sidewall Passivation by Oxidation During Refractory-Metal Plasma Etching.

Descriptive Note : Patent Application, filed 14 Apr 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Kosakowski, John ; Chu, William ; Foster, Kelly W ; Marrian, Christie R ; Peckerar, Martin C

PDF Url : ADD017642

Report Date : 14 Apr 1995

Pagination or Media Count : 19

Abstract : Sidewalls in a pattern of a refractory metal on a substrate are passivated during plasma etching by introducing water vapor into the etching chamber. This process obtains nearly vertical sidewalls. In one exemplified embodiment, a pattern of tungsten on a chromium etch step layer was reactive ion etched. In that embodiment, the reactive ion etching was intermittently paused. After each pause, the workpiece was warmed from below about 2O%C to about room temperature. Then, water vapor was introduced into the etching chamber housing the workpiece. After the water vapor was introduced, the workpiece was cooled to below about 200C and reactive ion etching was resumed. Alternatively, water vapor can be introduced into the etching chamber continuously during plasma etching. (AN)

Descriptors :   *PATENT APPLICATIONS, *ETCHING, *REFRACTORY METALS, LAYERS, PLASMAS(PHYSICS), SUBSTRATES, ION BEAMS, LITHOGRAPHY, OXIDATION, CHROMIUM, GAS DISCHARGES, REFLECTIVITY, TUNGSTEN, WATER VAPOR, PASSIVITY, SULFUR COMPOUNDS, PATTERN MAKING

Subject Categories : Metallurgy and Metallography
      Printing and Graphic Arts

Distribution Statement : APPROVED FOR PUBLIC RELEASE