Accession Number : ADD017725

Title :   Silicon to Sapphire Bond.

Descriptive Note : Patent, Filed 7 Jun 93, patented 15 Aug 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Imthurn, George P ; Walker, Howard

Report Date : 15 Aug 1995

Pagination or Media Count : 3

Abstract : A method of bonding silicon to sapphire may be performed at room temperature and with no greater pressure than that due to one wafer resting on another. The method comprises the steps of polishing one side of a flat sapphire wafer to a mirror-like surface; polishing one side of a flat silicon wafer to a mirror-like surface; cleaning the wafers and then stacking the wafers so that their corresponding mirror-like surfaces contact. The room temperature bonding that occurs is relatively strong, and the bonded wafers can be handled without danger of their becoming unbonded. If desired, the bonded wafers may be subjected to further processing to further strengthen their bond. jg p.1

Descriptors :   *SAPPHIRE, *SILICON, *BONDING, *PATENTS, ROOM TEMPERATURE, SURFACES, BONDED JOINTS, WAFERS, CLEANING, STACKING, POLISHING

Subject Categories : Inorganic Chemistry
      Adhesives, Seals and Binders
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE