Accession Number : ADD017796

Title :   Process for Forming Epitaxial BaF2 on GaAs.

Descriptive Note : Patent, Filed 19 May 94, patented 25 Jul 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Santiago, Francisco ; Chu, Tak K ; Stumborg, Michael F

Report Date : 25 Jul 1995

Pagination or Media Count : 5

Abstract : A process for growing single crystal epitaxial BaF2 layers on gallium arsenide substrates by slowly reacting BaF2 vapor with the clean, hot GaAs substrate at 500 deg to 700 deg C. in high vacuum until a uniform, thin (approx. 12A) layer of reaction product is formed and then vapor depositing BaF2 onto the reaction layer at room temperature to 400 deg C. to form the single crystal, epitaxial BaF2 layer. jg p1

Descriptors :   *GALLIUM ARSENIDES, *EPITAXIAL GROWTH, *FLUORIDES, *BARIUM HALIDES, *PATENTS, LAYERS, VAPORS, HIGH TEMPERATURE, SINGLE CRYSTALS, SUBSTRATES, ROOM TEMPERATURE, DEPOSITION, RESPONSE, HIGH VACUUM

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE