Accession Number : ADD017886

Title :   Synthesis of Triisopropylindium Diisopropyltelluride Adduct and Use for Semiconductor Materials.

Descriptive Note : Patent, Filed 16 May 94, patented 10 Oct 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gedridge, Robert W , Jr ; Korenstein, Ralph ; Irvine, Stuart J

Report Date : 10 Oct 1995

Pagination or Media Count : 5

Abstract : Triisopropylindium diisopropyltelluride adduct, ((CH3)2CH)3In:Te(CH(CH3)2)2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 10(exp 14)/cu cm and does not exhibit an appreciable memory effect.

Descriptors :   *MATERIALS, *ORGANOMETALLIC COMPOUNDS, *SEMICONDUCTORS, *PATENTS, SYNTHESIS, PRECURSORS, CHARGE CARRIERS, MEMORY DEVICES, LOW LEVEL, CONCENTRATION(COMPOSITION), TELLURIDES, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, DOPING, N TYPE SEMICONDUCTORS, INDIUM, GROUP II COMPOUNDS, GROUP VI COMPOUNDS

Subject Categories : Organic Chemistry
      Inorganic Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE