Accession Number : ADD017941
Title : Method of Fabricating Sub-Half-Micron Trenches and Holes.
Descriptive Note : Patent, Filed 17 Nov 94, patented 17 Oct 95,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Hsu, David S
Report Date : 17 Oct 1995
Pagination or Media Count : 24
Abstract : A non-optical method for the formation of sub-half micron holes, vias, or trenches within a substrate. For example, a substrate having at least two buttresses or a trench having a interbuttress distance or a width of 1.0 to 0.5 microns, respectively, is conformally or non-conformally lined with a layer material. Thereafter, the layer material from horizontal surfaces is removed to expose the substrate underneath while leaving the layer material attached to the essentially vertical walls of the buttresses or the trenches essentially intact, thereby, narrowing the interbuttress distance or the trench width, respectively, to sub-half micron dimensions. The exposed substrate surface is then subjected to anisotropic etching to form sub-half micron trenches, holes or vias in the substrate. Finally, the buttresses and layer material are removed from the substrate. Alternatively, a template of buttresses or channel glass having openings, lined with layer material, on the order of sub-half micron widths is placed on a substrate prior to anisotropic etching to form sub-half micron holes, vias or trenches within the substrate. The template is then removed leaving a substrate surface containing sub-half micron trenches, holes or vias. The template structure once made can be used repeatedly.
Descriptors : *ETCHING, *MICROCIRCUITS, *PATENTS, LAYERS, SILICON DIOXIDE, GALLIUM ARSENIDES, FABRICATION, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, SEMICONDUCTORS, TRENCHES, HOLES(OPENINGS), ANISOTROPY, SILICON, TEMPLATES, WAFERS, PHOTOLITHOGRAPHY
Subject Categories : Electrical and Electronic Equipment
Printing and Graphic Arts
Distribution Statement : APPROVED FOR PUBLIC RELEASE