Accession Number : ADD017942

Title :   Semiconductor Photodetector Device.

Descriptive Note : Patent, Filed 31 Mar 94, patented 17 Oct 95,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Carruthers, Thomas F

Report Date : 17 Oct 1995

Pagination or Media Count : 9

Abstract : A semiconductor photodetector employs a multilayer structure for controlling speed, efficiency and noise, A light-absorbing low band gap semiconductor emitter layer produces photogenerated charge upon absorption of light. A semiconductor collector layer collects the photogenerated charge. A semiconductor barrier layer between the light absorbing layer and the collector layer selectively blocks substantially all but photogenerated charge. A base layer may be optionally employed between the barrier layer and the collector layer for gating the current flow and controlling wavelength sensitivity.

Descriptors :   *PHOTODETECTORS, *OPTICAL DETECTORS, *PATENTS, OPTIMIZATION, THRESHOLD EFFECTS, EFFICIENCY, GATES(CIRCUITS), CHARGE CARRIERS, ENERGY TRANSFER, OPTICAL ANALYSIS, LIGHT TRANSMISSION, SEMICONDUCTOR JUNCTIONS, NOISE REDUCTION, ELECTRIC CURRENT, SEMICONDUCTING FILMS, EMITTERS, ELECTRON TRANSFER, OPTICAL PROCESSING, PHOTODIODES, NOISE(ELECTRICAL AND ELECTROMAGNETIC)

Subject Categories : Optical Detection and Detectors
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE