Accession Number : ADD018124
Title : Substrate Temperature Control Apparatus for CVD Reactors.
Descriptive Note : Patent, Filed 15 Mar 94, patented 18 Jun 96,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Snail, Keith A ; Thorpe, Thomas P
Report Date : 18 Jun 1996
Pagination or Media Count : 12
Abstract : One of the critical experimental parameters affecting the quality and growth rate of chemical vapor deposition species, such as, diamond is the substrate temperature. An apparatus and technique for the precise control of the substrate temperature in a chemical vapor deposition environment has been developed. In a preferred embodiment, the technique uses a variable gas mixture in conjunction with the disclosed apparatus of the present invention to precisely control the temperature of the substrate to within at least +-20 deg C. for extended periods of time and over large area substrates on the order of 1' in diameter or larger.
Descriptors : *CHEMICAL VAPOR DEPOSITION, *SUBSTRATES, *CHEMICAL REACTORS, *TEMPERATURE CONTROL, TIME INTERVALS, GROWTH(GENERAL), DIAMONDS, GASES, MIXTURES, VARIABLES, PATENTS
Subject Categories : Inorganic Chemistry
Industrial Chemistry and Chemical Processing
Distribution Statement : APPROVED FOR PUBLIC RELEASE