Accession Number : ADD018125
Title : Method for Intrinsically Doped III-A and V-A Compounds.
Descriptive Note : Patent, Filed 8 Mar 95, Patented 11 Jun 96,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Twigg, Mark E ; Fatemi, Mohammad ; Tadayon, Bijan
Report Date : 11 Jun 1996
Pagination or Media Count : 5
Abstract : An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.
Descriptors : *CRYSTAL STRUCTURE, *AMORPHOUS MATERIALS, *GROUP III COMPOUNDS, *GROUP V COMPOUNDS, *DOPING, CONDUCTIVITY, HIGH TEMPERATURE, SINGLE CRYSTALS, SEMICONDUCTORS, GASES, HEATING, INERT MATERIALS, ATMOSPHERES, PATENTS, RARE GASES
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE