Accession Number : ADD018349

Title :   Thin-Film Edge Field Emitter Device and Method of Manufacture Therefor.

Descriptive Note : Patent, Filed 11 Oct 94, patented 17 Dec 96,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Hsu, David S ; Gray, Henry F

Report Date : 17 Dec 1996

Pagination or Media Count : 24

Abstract : A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Descriptors :   *THIN FILMS, *PATENTS, *CATHODES(ELECTRON TUBES), SEMICONDUCTORS, ELECTRONS, ELECTRON BEAMS, FIELD EMISSION, ELECTROSTATIC FIELDS, LOW VOLTAGE, HYDROGEN FLUORIDE, ELECTRON BEAM LITHOGRAPHY

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE