Accession Number : ADD018354
Title : Method for Preparation of Mask for Ion Beam Lithography.
Descriptive Note : Patent, Filed 4 Apr 94, Patented 22 Oct 96,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yahalom, Joseph ; Peckerar, Martin
Report Date : Oct 1996
Pagination or Media Count : 6
Abstract : A mask for ion beam lithography is made by coating a front side, sidewalls, and a backside of a substrate with an insulating layer; opening, on the front side of the substrate, a window in the insulating layer to expose a front substrate surface; depositing an oxide membrane on the front substrate surface; opening a portion of the insulating material on the backside of the substrate to form an exposed backside of the substrate; forming a photoresist layer on the oxide membrane; patterning the photoresist layer; ion beam etching the oxide membrane through the patterned photoresist layer to completely remove selected portions of the oxide membrane and form a stenciled pattern in the oxide membrane; removing the patterned photoresist layer from the stenciled oxide membrane; removing, from the backside of the substrate, the exposed backside of the substrate to expose a backside of the stenciled pattern in the oxide membrane, thus leaving a stenciled oxide membrane, corresponding to the stenciled oxide pattern, held within a frame formed by remaining portions of the substrate. The stenciled oxide membrane is capable of being supported entirely by the frame.
Descriptors : *PATENTS, *ELECTRON BEAM LITHOGRAPHY, SILICON DIOXIDE, MODULUS OF ELASTICITY, SUBSTRATES, ION BEAMS, ETCHING, ELECTRON BEAMS, ALUMINUM OXIDES, THERMAL EXPANSION, RESIDUAL STRESS, MICROELECTRONICS, PROTECTIVE COATINGS, GOLD, PHOTORESISTORS, ELECTRICAL INSULATION
Subject Categories : Printing and Graphic Arts
Distribution Statement : APPROVED FOR PUBLIC RELEASE