Accession Number : ADD018455

Title :   Compound-Cavity, High-Power, Modelocked Semiconductor Laser.

Descriptive Note : Patent, Filed 6 Feb 95, patented 1 Oct 96,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Goldberg, Lew

Report Date : Oct 1996

Pagination or Media Count : 14

Abstract : The invention is for a new type of an efficient and compact laser system, based on semiconductor gain medium, which produces high peak power. The laser system comprises: a compound cavity laser defined by first and second reflective elements; a developing structure, having a first end containing the first reflective element and a second end, being disposed in the compound cavity laser and being responsive to an RF frequency signal within a preselected RF frequency range for developing and reflecting from the first reflective element modelocked laser pulses at a selected wavelength; a first amplifier disposed between the developing structure and the second reflective element and being responsive to the reflected modelocked laser pulses from the developing structure for amplifying the modelocked laser pulses at the selected wavelength, the first amplifier having an end containing the second reflective element for transmitting a first portion of the amplified modelocked laser pulses therethrough and for reflecting a second portion of the amplified modelocked laser pulses back toward the developing structure; and a nonlinear element for converting the first portion of the amplified modelocked laser pulses from said first amplifier to amplified modelocked laser pulses at a desired frequency-convened wavelength.

Descriptors :   *HIGH POWER, *LASER CAVITIES, *SEMICONDUCTOR LASERS, *MODE LOCKED LASERS, *PATENTS, FREQUENCY, LASERS, LASER BEAMS, PEAK POWER, NONLINEAR SYSTEMS, SIGNALS, GAIN, REFLECTIVITY, RADIOFREQUENCY, PULSE AMPLIFIERS, AMPLIFIERS

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE