Accession Number : ADD018539
Title : Non-Volatile, Bidirectional, Electrically Programmable Integrated Memory Element Implemented Using Double Polysilicon.
Descriptive Note : Patent, Filed 13 Dec 95, patented 1 Apr 97,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Shoemaker, Patrick A
Report Date : 01 Apr 1997
Pagination or Media Count : 14
Abstract : A non-volatile, bidirectional electrically programmable integrated memory element is describe which includes a dielectric structure supported by a substrate and a programming terminal supported by the dielectric structure. The programming terminal includes: (1) a first polysilicon structure; a second polysilicon structure; and an electrically conductive first interconnect which electrically connects the first polysilicon structure to the second polysilicon structure; (2) a floating gate structure supported by the dielectric structure which includes: (a) a third polysilicon structure which overlies and is separated from a section of the first polysilicon structure by the dielectric structure; (b) a fourth polysilicon structure which is overlain and separated from a section of the second polysilicon structure by the dielectric structure; and (c) an electrically conductive second interconnect which electrically couples the third polysilicon structure to the fourth polysilicon structure. The memory element also includes a capacitor electrically connected to the second interconnect.
Descriptors : *ELECTRICAL PROPERTIES, *NONVOLATILE MEMORIES, *PATENTS, COUPLING(INTERACTION), COMPUTER PROGRAMMING, DIELECTRICS, GATES(CIRCUITS), SUBSTRATES, POLYSILICONS
Subject Categories : Computer Hardware
Distribution Statement : APPROVED FOR PUBLIC RELEASE