Accession Number : ADD018577

Title :   Low Temperature Plasma Film Deposition using Dielectric Chamber as Source Material

Descriptive Note : Patent, Filed 24 Jan 96, patented 3 Jun 97

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Aklufi, Monti E

Report Date : 03 Jun 1997

Pagination or Media Count : 5

Abstract : A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.

Descriptors :   *LOW TEMPERATURE, *PLASMAS(PHYSICS), *DIELECTRICS, *FILMS, *CHEMICAL VAPOR DEPOSITION, *INTEGRATED CIRCUITS, *PLASMA GENERATORS, *PATENTS, HYDRIDES, MICROWAVES, SUBSTRATES, SEMICONDUCTORS, HYDROGEN, GASES, VOLATILITY, PARTICULATES, ATOMIC STRUCTURE

Subject Categories : Electrical and Electronic Equipment
      Plasma Physics and Magnetohydrodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE