Accession Number : ADD018630

Title :   Process for Forming Epitaxial BaF2 on GaAs

Descriptive Note : Patent Application, Filed 31 May 95

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Chu, Tak-Kin ; Santiago, Francisco ; Stumborg, Michael

PDF Url : ADD018630

Report Date : 31 May 1995

Pagination or Media Count : 13

Abstract : A process for growing single crystal epitaxial BaF2 layers on gallium arsenide substrates by slowly reacting Ba, BaCl2, BaI2, BaBr2, BaF2.BaCl2, BaF2.BaBr2, BaF2.BaI2, BaC12.BaBr2 , Ba3(GaF6)2, BaH2, or BaO2 vapor with a clean, hot GaAs substrate at 500 to 700 deg C in high vacuum until a uniform, thin (tilde 12A) layer of reaction product is formed and then vapor depositing BaF2 onto the reaction layer at room temperature to 400 deg C to form the single crystal, epitaxial BaF2 layer.

Descriptors :   *SINGLE CRYSTALS, *EPITAXIAL GROWTH, VAPORS, GALLIUM ARSENIDES, SUBSTRATES, ROOM TEMPERATURE, HIGH VACUUM

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE