Accession Number : ADD018669

Title :   Ohmic Contact for Semiconductor

Descriptive Note : Patent Application, Filed 27 Mar 97

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Boos, John B

PDF Url : ADD018669

Report Date : 27 Mar 1997

Pagination or Media Count : 21

Abstract : An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationship to each other, the source and the drain comprising Pd/barrier/Au layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170 deg C for 1/4-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.

Descriptors :   *PATENT APPLICATIONS, *SEMICONDUCTORS, *ELECTRIC CONTACTS, LAYERS, RESISTANCE, ELECTRONIC EQUIPMENT, SUBSTRATES, REDUCTION, GOLD, PALLADIUM, MOLECULAR BEAM EPITAXY

Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE