Accession Number : ADD018749

Title :   Interband Lateral Resonant Tunneling Transistor

Descriptive Note : Patent, Filed 14 Nov 94, patented 5 Aug 97

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Meyer, Jerry R ; Hoffman, Craig A ; Bartoli Jr, Filbert J

Report Date : 05 Aug 1997

Pagination or Media Count : 11

Abstract : This invention describes a nanometer scale interbank lateral resonant tunneling transistor, and the method for producing the same with lateral geometry, good fanout properties and suitable for incorporation into large scale integration circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow gap nanostructures which are highly responsive to quantum phenomena. Such quantum effect devices can have very high density operate at much higher temperatures and are capable of driving other devices.

Descriptors :   *TUNNELING(ELECTRONICS), *FIELD EFFECT TRANSISTORS, *PATENTS, GATES(CIRCUITS), QUANTUM ELECTRONICS, DOPING, LARGE SCALE INTEGRATION, NARROW GAP SEMICONDUCTORS, NANOTECHNOLOGY

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE