Accession Number : ADP001542

Title :   Frequency Stability and Control Characteristics of (GaA1)As Semiconductor Lasers,

Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s) : Mooradian,A. ; Welford,D.

Report Date : 1982

Pagination or Media Count : 2

Abstract : A study of fundamental linewidth broadening mechanisms in cw (GaAl)As diode lasers is presented. The linewidths were observed to increase linearly with increased reciprocal output power which can be explained using a modified Schawlow-Townes theory. A power-independent broadening of the linewidth was also observed and has been explained as due to refractive index fluctuations resulting from statistical fluctuations in the number of conduction electrons in the small active volume of the devices studied. The range of linewidths for these devices can severely limit the utility of semiconductor lasers in various applications such as frequency standards, heterodyne communications, and fiber optical sensors. Significant performance improvements have been made by operating these devices in a stable external cavity.

Descriptors :   *Frequency, *Control, *Symposia, *Semiconductor lasers, *Stability, Stabilization, Gallium arsenides, Aluminum, Diodes, Continuous wave lasers, Bandwidth, Refractive index, Statistical analysis, Electrons

Distribution Statement : APPROVED FOR PUBLIC RELEASE