Accession Number : ADP001565

Title :   Aluminum Nitride Thin Film and Composite Bulk Wave Resonators,

Corporate Author : IOWA STATE UNIV AMES

Personal Author(s) : Lakin,K. M. ; Wang,J. S. ; Landin,A. R.

Report Date : 1982

Pagination or Media Count : 8

Abstract : The fundamental material and device properties of miniature bulk wave resonators have been investigated for fundamental mode oscillator control and filter applications in the UHF range. The properties of aluminum nitride in the composite resonator geometry and in an edge-only supported plate configuration are reported. The AlN films were grown in a DC planar magnetron sputtering system using the plasma reaction between sputtered Al from the target and N2 in the plasma. The general sputtering conditions were as follows: substrate temperature equal 200 C, atmospheric gas equal 99.999% Nitrogen, sputtering pressure: 1 x 10 to the minus third power torr, DC power equal 225 watts and deposition rate equal 1.2 micrometer/hr. The films were evaluated by SEM, x-ray diffraction, and Auger electron spectroscopy. These results showed that the sputtered AlN films have a highly oriented structure with the c-axis normal to the surface of the Si substrate.

Descriptors :   *Frequency, *Control, *Symposia, *Resonators, *Thin films, Aluminum, Nitrides, Bulk materials, Composite materials, Configurations, Planar structures, Electron microscopy, X ray diffraction, Surface acoustic waves

Distribution Statement : APPROVED FOR PUBLIC RELEASE