Accession Number : ADP001651

Title :   Spreads and Shifts of Markers in Ion Mixing,

Corporate Author : CALIFORNIA INST OF TECH PASADENA

Personal Author(s) : Paine,Bruce M.

Report Date : 1983

Pagination or Media Count : 10

Abstract : One of the simplest conceivable sample configurations for studying ion mixing in solids consists of a thin (approximately 10 A) impurity layer (or 'marker') buried several hundred A deep in an otherwise uniform medium. If the mass of the impurity is substantially greater than that of the medium, then the mixing of the marker can be monitored by backscattering spectrometry. Such experiments have been conducted for a variety of marker elements buried in Si plus markers buried in Al and SiO2. In these, the mixing is usually characterized by Dt, the product of the effective diffusion coefficient and time and delta x, the shift of the mean of the marker distribution. In this presentation, we outline the general results of these experiments to date, compare them with the predictions of published models, and finally comment briefly on present understanding of the mechanisms of the ion-induced mixing that is observed. (Author)

Descriptors :   *Ion beams, *Mixing, *Ion implantation, *Workshops, *Solids, *Diffusion, Layers, Impurities, Backscattering, Spectrometry, Experimental data, Silicon, Mean, Distribution, Coefficients, Aluminum, Silicates, Predictions, Room temperature

Distribution Statement : APPROVED FOR PUBLIC RELEASE