Accession Number : ADP001652

Title :   Marker Experiments in Si and SiO2,


Personal Author(s) : Barcz,Adam ; Paine,Bruce M.

Report Date : 1983

Pagination or Media Count : 6

Abstract : To investigate the role of the chemical nature of the medium and the impurity species in the ion mixing process, we have measured the apparent broadening of thin metal markers in SiO2 and compared it with the broadening of markers in Si. Samples consisted of markers of thicknesses of the order of approximately 10 A of W or Pt imbedded in Si, and of Pt, W, Hf, Co, Ni and Ti markers in SiO2. The SiO2 matrices were prepared by both chemical vapor deposition (CVD) and chemical oxidation of silicon in a steam atmosphere. The samples were irradiated with 300 keV Xe+ ions at 300 K and analyzed by 2 MeV RBS. The efficiency of the mixing is expressed as omega mix, - the variance of the redistribution of marker atoms due to the ion irradiation. (Author)

Descriptors :   *Ion beams, *Mixing, *Ion implantation, *Workshops, *Markers, Vapor deposition, Chemical properties, Thickness, Impurities, Silicates, Platinum, Tungsten, Hafnium, Cobalt, Preparation, Chemicals

Distribution Statement : APPROVED FOR PUBLIC RELEASE