Accession Number : ADP001653

Title :   Atomic Redistribution in Ion Mixing of Bilayer Thin Films,

Corporate Author : ATOMIC ENERGY OF CANADA LTD CHALK RIVER (ONTARIO) CHALK RIVER NUCLEAR LABS

Personal Author(s) : Jorch,Harald H. ; Werner,R. D.

Report Date : 1983

Pagination or Media Count : 12

Abstract : An apparatus used for in-situ ion mixing and Rutherford Backscattering (RBS) analysis is described, and data are presented for thin film (i.e. 'limited supply') structures of the Ag-Si and Au-Si simple eutectic systems. We find considerable preferred orientation in the Ag thin films which was not observed in the Au films although they were similarly prepared. This texturing is initially increased by Xe ion bombardment and then decreases (less preferred orientation), but even with approximately 10 to the 16th power Xe 2/cm it is still far from random. Caution is required in both RBS analysis and during the heavy ion bomdardment to avoid misinterpretation due to this orientation problem. (Author)

Descriptors :   *Ion beams, *Mixing, *Ion implantation, *Workshops, *Thin films, *Ion bombardment, Room temperature, Atomic structure, Distribution, Layers, Eutectics, Gold, Silicon, Silver, Xenon, Thermodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE