Accession Number : ADP001654

Title :   Chemical Influences in Ion Irradiation-Induced Mixing,

Corporate Author : CALIFORNIA INST OF TECH PASADENA

Personal Author(s) : Banwell,Thomas ; Nicolet,Marc-A.

Report Date : 1983

Pagination or Media Count : 9

Abstract : Ion irradiation-induced mixing can be attributed to two principal types of processes; recoil implantation and 'cascade' mixing, both of which may contribute significantly in bilayer mixing experiments. We have examined the influence of the chemical reactivity of the layers on these two mechanisms. For this study we chose the mixing of Ti/SiO2, Cr/SiO2 and Ni/SiO2 bilayers induced by 290 keV Xe irradiation at irradiation temperatures of 77-750 K. The ballistic processes should be similar for all three systems since the metals have similar atomic masses; however, their chemical reactivities with SiO2 are very different. Titanium readily reacts thermally with SiO2 at temperatures above 900 K. Chromium reacts with SiO2; however, the reaction is restricted by interfacial passivation. Nickel does not react with SiO2; a Ni film on SiO2 will coalesce into islands after only 1100 K annealing. (Author)

Descriptors :   *Ion beams, *Mixing, *Ion implantation, *Workshops, *Irradiation, Annealing, Experimental data, Chemical reactions, Silicates, Cascade structures, Silicon dioxide, Chromium, Titanium, Atomic structure, Spectrometry, Backscattering, Ballistics, Etching, Nickel

Distribution Statement : APPROVED FOR PUBLIC RELEASE