Accession Number : ADP001655

Title :   Sputtering and Ion Mixing in CrSi2: Temperature Effects,


Personal Author(s) : Shreter,Uri

Report Date : 1983

Pagination or Media Count : 5

Abstract : Ion mixing and sputtering are influenced by the same transport mechanisms during irradiation. Both prompt and delayed processes are expected to affect mixing as well as sputtering. It is known that mixing of a Cr layer on Si is strongly temperature-dependent above room temperature. CrSi2 was chosen therefore for the investigation of temperature effects in sputtering. Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi2 on Si irradiated with 200 keV Xe ions. When the CrSi2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room temperature irradiation to 65 at 290 degrees C.

Descriptors :   *Ion beams, *Mixing, *Ion implantation, *Workshops, *Sputtering, *Diffusion, Layers, Chromium, Room temperature, Measurement, Backscattering, Spectrometry, Silicon dioxide, Thinness, Stoichiometry

Distribution Statement : APPROVED FOR PUBLIC RELEASE