Accession Number : ADP001659

Title :   Ion-Beam Induced Changes in Alloy Composition,

Corporate Author : ARGONNE NATIONAL LAB IL MATERIALS SCIENCE AND TECHNOLOGY DIV

Personal Author(s) : Rehn,Lynn E. ; Wiedersich,H.

Report Date : 1983

Pagination or Media Count : 12

Abstract : In general, point defect fluxes transport alloying components in proportions which differ from the bulk alloy concentration. Hence, even in initially homogeneous alloys, the local concentration will be altered in any region which experiences a net influx or outflow of defects. Because large numbers of point defects are introduced by each implanted ion, preferential transport of certain alloying components by persistent defect fluxes generated during ion bombardment can be highly efficient in modifying near-surface alloy compositions. This nonequilibrium, radiation-induced segregation (RIS) adds a further degree of complexity to the ion-implantation process. In a more positive vein, however, the established existence of strong RIS effects should allow certain materials modifications to be achieved more efficiently, and make possible additional types of modifications which otherwise would not be feasible. (Author)

Descriptors :   *Ion beams, *Mixing, *Ion implantation, *Workshops, *Ion bombardment, Silicon, Defects(Materials), Flux(Rate), Alloys, Surface properties, Transport properties, Modification, Crystal lattices, Nickel, Constants, Dose rate

Distribution Statement : APPROVED FOR PUBLIC RELEASE