Accession Number : ADP002214

Title :   Usage of the SYSCAP II Circuit Analysis Program to Determine Semiconductor Failure Threshold Levels caused by Lightning/EMP Transients,

Corporate Author : ROCKWELL INTERNATIONAL ANAHEIM CA AUTONETICS STRATEGIC SYSTEMS DIV

Personal Author(s) : Rusher,D. L. ; Kleiner,C. T.

Report Date : 1983

Pagination or Media Count : 6

Abstract : This paper describes an improved technique for calculating semiconductor junction heating resulting from arbitrary time-varying source terms. A FORTRAN subroutine is developed which permits solution of the convolution integral in the SYSCAP circuit analysis program which will simulate the thermal transient for each semiconductor of interest in a circuit subject to lightning/EMP disturbances. An example circuit is used to demonstrate the techniques; the results compare favorably with laboratory test data. (Author)

Descriptors :   *Lightning, *Semiconductor devices, Electromagnetic pulses, Transients, Pulses, Electric current, Heat, Failure(Electronics), Mathematical models, Computerized simulation, Symposia

Distribution Statement : APPROVED FOR PUBLIC RELEASE