Accession Number : ADP006640

Title :   Advances in Processing and Properties of Perovskite Thin-Films for FRAMs, DRAMs, and Decoupling Capacitors,

Corporate Author : ARIZONA STATE UNIV TEMPE

Personal Author(s) : Dey, S. K. ; Barlingay, C. K. ; Lee, J. J. ; Gloerstad, T. K. ; Suchicital, C. T.

Report Date : 05 APR 1991

Pagination or Media Count : 14

Abstract : Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt / Ti / Si3N4 / Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were fabricated at temperatures as low as 550 deg C within 15 minutes by rapid thermal annealing. The films heat treated at 700 deg C for 5 minutes were single grain thick and exhibited P sub r, P sub sp, and E sub c in the ranges of 29-32 micron C/cm2, 44-53 micro C/cm2, and 50-60 kV/cm, respectively, and high speed switching times below 5 ns on 30x30 micron m2 electrodes. A switching time of 2.7 ns was observed on 19xl9 micron m2 area electrodes at a field of 200 kv/cm. Results of low and high field characterization on paraelectric PLT thin-films which were conventionally heat treated indicated that it has an excellent potential for use in ULSI DRAMs and as decoupling capacitors. These films showed a high charge storage density (15 micron C/cm2) and a low leakage current (0.5 micron A/cm2) at a field of 200 kv/cm. Also, the charging time for a capacitor area of 1 micron m2 at 200 kv/cm was estimated to be 0. 1 0 ns.

Descriptors :   ANNEALING, CAPACITORS, CRACKS, DECOUPLING, DIAMETERS, ELECTRODES, FILMS, GELS, SUBSTRATES, SWITCHING, TEMPERATURE, THIN FILMS, PEROVSKITES, FERROELECTRIC MATERIALS, LEAD TITANATES, ZIRCONATES, MEMORY DEVICES.

Subject Categories : Electricity and Magnetism
      Ceramics, Refractories and Glass

Distribution Statement : APPROVED FOR PUBLIC RELEASE