Accession Number : ADP006643
Title : Pulsed Laser Deposition (PLD) of Oriented Bismuth Titanate Films for Integrated Electronic Applications,
Corporate Author : WESTINGHOUSE SCIENCE AND TECHNOLOGY CENTER PITTSBURGH PA
Personal Author(s) : Buhay, H. ; Sinharoy, S. ; Francombe, M. H. ; Kasner, W. H. ; Talvacchio, J.
Report Date : 05 APR 1991
Pagination or Media Count : 10
Abstract : In this paper we describe recent successes of growth of epitaxial bismuth titanate (BTO) films by pulsed laser deposition (PLD) suitable for electro-optic and electrical switching device structures, and fabrication of an improved gate structure for a ferroelectric memory FET (FEMFET). TEM and x-ray results indicate that excellent crystalline quality BTO films were achieved on LaAlO3. Polarization switching was demonstrated for BTO capacitors with epitaxial superconducting YBaCu3Oy as the lower electrode. Using an SiO2 buffer layer, a BTO/Si structure was fabricated and direct charge modulation in the Si by polarization reversal in the BTO was demonstrated.
Descriptors : *ELECTRIC SWITCHES, *FERROELECTRIC MATERIALS, BUFFERS, CAPACITORS, ELECTRODES, FABRICATION, FILMS, LASERS, LAYERS, MODULATION, OPTICS, POLARIZATION, PULSED LASERS, QUALITY, STRUCTURES, X RAYS, TITANATES, BISMUTH COMPOUNDS, SUPERCONDUCTORS, BISMUTH TITANATE.
Subject Categories : Electricity and Magnetism
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE