Accession Number : ADP006644
Title : Filament-Assisted Pulsed Laser Deposition of Epitaxial PbZr subx Ti sub1-x O sub3 Films: Morphological and Electrical Characterization,
Corporate Author : NAVAL RESEARCH LAB WASHINGTON DC
Personal Author(s) : Leuchtner, R. E. ; Grabowski, K. S. ; Chrisey, D. B. ; Horwitz, J. S.
Report Date : 05 APR 1991
Pagination or Media Count : 15
Abstract : A modification of the conventional pulsed laser deposition technique was employed, whereby a low energy electron-emitting filament was placed between the target and the substrate (-20 V filament/substrate bias) in order to produce reactive species (02- and O-) during deposition. Using this modification, epitaxial thin films of PbZrxTil-xO3 (PZT, 0<x<0.6) were prepared in situ on virgin (100) MgO and (100) Pt/(100) MgO substrates at a substrate temperature of 550 deg C and in an oxygen ambient (0.3 Torr). The topography of films prepared without a filament on virgin MgO were porous and composed of grains of about 1000 A in diameter. As the emission current was increased from 0 to 400 micron A, the grain size decreased to less than 100 A with a concomitant decrease in the porosity. The nucleation of crystallites of other orientations was observed at emission currents greater than about 500 micron A. Trilayer structures (Pt/PZT/Pt/<1OO>Mgo) were fabricated for electrical measurements. Non-filament-assisted PZT cells usually failed because of a high probability of conductive paths through the PZT layer. Filament-assisted films were much less prone to this problem. Typical remanent polarizations and coercive fields were 15-20 micron C/cm2 and 30-50 kv/cm, respectively.
Descriptors : *DEPOSITION, *FERROELECTRIC MATERIALS, CELLS, DIAMETERS, ELECTRONS, EMISSION, ENERGY, FILAMENTS, GRAIN SIZE, LASERS, LAYERS, LOW ENERGY, MEASUREMENT, MODIFICATION, NUCLEATION, OXYGEN, PATHS, POROSITY, PROBABILITY, PULSED LASERS, STRUCTURES, SUBSTRATES, TEMPERATURE, THIN FILMS, TOPOGRAPHY, LEAD TITANATES, ZIRCONATES.
Subject Categories : Electricity and Magnetism
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE