Accession Number : ADP006654
Title : Ferroelectric Thin Film Research in France,
Corporate Author : THOMSON-CSF ORSAY (FRANCE)
Personal Author(s) : Gaucher, P. ; Faure, S. P. ; Barboux, P.
Report Date : 05 APR 1991
Pagination or Media Count : 10
Abstract : After a review of the research made on thin film deposition in France, this work presents the comparison between two chemical deposition methods for PZT films : sol-gel method based on low molecular weight precursors and solvent, and MOD Metallo-Organic Deposition) process based on a hydrophobic solvent. The influence of the viscosity of the solvent and of the solubility of water is shown with regard to stability and drying properties. The final electrical properties of the ferroelectric films are also compared such as the hysteresis loop which characterizes the most important properties for memory application : coercive voltage and rectangularity.
Descriptors : *FERROELECTRIC MATERIALS, CHEMICALS, COMPARISON, DEPOSITION, DRYING, ELECTRICAL PROPERTIES, FILMS, FRANCE, GELS, HYSTERESIS, LOOPS, MOLECULAR WEIGHT, PRECURSORS, SOLUBILITY, SOLVENTS, STABILITY, THIN FILMS, VISCOSITY, VOLTAGE, WATER, ZIRCONATES, LEAD TITANATES, ORGANOMETALLIC COMPOUNDS.
Subject Categories : Electricity and Magnetism
Ceramics, Refractories and Glass
Distribution Statement : APPROVED FOR PUBLIC RELEASE