Accession Number : ADP006671

Title :   Integrated of Ferroelectric PZT Capacitors with GaAs JFET Devices,

Corporate Author : MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO HUNTINGTON BEACH CA

Personal Author(s) : Wu, S. Y. ; Giedeman, W. A.

Report Date : 05 APR 1991

Pagination or Media Count : 14

Abstract : This invited paper presents the development work on integration of ferroelectric PZT capacitors with GaAs JFET devices for the fabrication of high density nonvolatile ferroelectric random access memories at McDonnell Douglas Electronic Systems Company. The paper will start with the preparation and characterization of various properties of the PZT films deposited by a sol-gel technique. It will be followed by the two approaches investigated for the formation of the p+ gates of GaAs JFETs: zinc diffusion and zinc implantation. The process compatibility and sequence of memory fabrication incorporating these two approaches will be described. The difficulties associated with the zinc diffusion approach will be discussed. Finally, the current effort in the integration of the PZT capacitors and the implanted GaAs JFETs will be presented.

Descriptors :   *FIELD EFFECT TRANSISTORS, *THIN FILM CAPACITORS, *FERROELECTRIC MATERIALS, COMPATIBILITY, DENSITY, DIFFUSION, ELECTRONICS, FABRICATION, GELS, HIGH DENSITY, IMPLANTATION, INTEGRATION, PREPARATION, SEQUENCES, LEAD TITANATES, ZIRCONATES, GALLIUM ARSENIDES, GATES(CIRCUITS).

Subject Categories : Electricity and Magnetism
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE