Accession Number : ADP006673

Title :   A High-Capacitance PZT-on-Ta205 Memory Cell with a Chemically Stable Electrode Suitable for Sub-Micron Processing,

Corporate Author : ELECTRONICS RESEARCH LAB ADELAIDE (AUSTRALIA)

Personal Author(s) : Azuma, M. ; Nasu, T. ; Katsu, S. ; Otsuki, T. ; Kano, G.

Report Date : 05 APR 1991

Pagination or Media Count : 17

Abstract : A high-capacitance Pb(Zrx, Til-x)03 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction and XMA analysis of the sample showed that PZT reacted with neither Ta nor Ta2O5. The capacitor with 500 nm PZT thickness shows current density of 10-8 A/cm2 at 4MV/cm,-the breakdown field of 8MV/cm, and the effective dielectric constant of 40.

Descriptors :   *LEAD TITANATES, *FERROELECTRIC MATERIALS, CAPACITANCE, CAPACITORS, CELLS, CONSTANTS, CURRENT DENSITY, DIELECTRICS, ELECTRODES, PROCESSING, THICKNESS, TILES, X RAY DIFFRACTION, ZIRCONATES, JAPAN.

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE