Accession Number : ADP006673
Title : A High-Capacitance PZT-on-Ta205 Memory Cell with a Chemically Stable Electrode Suitable for Sub-Micron Processing,
Corporate Author : ELECTRONICS RESEARCH LAB ADELAIDE (AUSTRALIA)
Personal Author(s) : Azuma, M. ; Nasu, T. ; Katsu, S. ; Otsuki, T. ; Kano, G.
Report Date : 05 APR 1991
Pagination or Media Count : 17
Abstract : A high-capacitance Pb(Zrx, Til-x)03 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction and XMA analysis of the sample showed that PZT reacted with neither Ta nor Ta2O5. The capacitor with 500 nm PZT thickness shows current density of 10-8 A/cm2 at 4MV/cm,-the breakdown field of 8MV/cm, and the effective dielectric constant of 40.
Descriptors : *LEAD TITANATES, *FERROELECTRIC MATERIALS, CAPACITANCE, CAPACITORS, CELLS, CONSTANTS, CURRENT DENSITY, DIELECTRICS, ELECTRODES, PROCESSING, THICKNESS, TILES, X RAY DIFFRACTION, ZIRCONATES, JAPAN.
Subject Categories : Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE