Accession Number : ADP006676
Title : Ferroelectric Pb(Zr,Ti) 03 Thin Films Prepared by Planar Multi-Target Sputtering,
Corporate Author : SIEMENS A G MUNICH (GERMANY F R)
Personal Author(s) : Bruchhaus, R. ; Huber, H. ; Pitzer, D. ; Wersing, W.
Report Date : 05 APR 1991
Pagination or Media Count : 8
Abstract : Lead zirconate titanate films are deposited using a planar multi-target sputtering system. This system consists of three metallic targets (Zr,Pb,Ti) and a rotating substrate holding pallet achieving a layer-by-layer growth of the material. Substrates used in this study were oxidised (100)Si wafers with thin sputtered Pt layer. At substrate temperatures of about 450 deg C in situ (i.e. without post-deposition annealing) deposition of single phase perovskite PZT was obtained. Deposition rate is 3.5 nm/min. At substrate temperatures of more than 500 deg C the layers are poor in lead. ZrTiO4 was identified by x-ray diffraction. The dielectric constant and losses of the PZT films varied from 400-500 and from 0.008-0.015 respectively. The films. exhibited a hysteresis loop, remanent polarization measured was 7 AC/cm2 and coercive field strength 7.5x10(6) V/m.
Descriptors : *DEPOSITION, *LEAD TITANATES, CONSTANTS, DIELECTRICS, DIFFRACTION, FILMS, HYSTERESIS, LAYERS, LOOPS, LOSSES, MATERIALS, PALLETS, PEROVSKITES, PHASE, POLARIZATION, RATES, SPUTTERING, SUBSTRATES, TARGETS, TEMPERATURE, WAFERS, X RAY DIFFRACTION, ZIRCONATES, LAMINATES, SILICON, PLATINUM, GERMANY.
Subject Categories : Ceramics, Refractories and Glass
Distribution Statement : APPROVED FOR PUBLIC RELEASE