Accession Number : ADP006678

Title :   Ferroelectrics for Silicon VLSI,

Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s) : Hsu, Sheng T. ; Kalish, Israel H.

Report Date : 05 APR 1991

Pagination or Media Count : 17

Abstract : The application of ferroelectrics to EEPROM, non-volatile SRAMs, and sub-0.5 micron channel length MOS field effect transistors for silicon VLSI can significantly simplify device fabrication process, increase circuit density, and enhance device performance.

Descriptors :   *RANDOM ACCESS COMPUTER STORAGE, *READ ONLY MEMORIES, *FERROELECTRIC MATERIALS, CHANNELS, CIRCUITS, DENSITY, FABRICATION, FIELD EFFECT TRANSISTORS, LENGTH, SILICON, VERY LARGE SCALE INTEGRATION, METAL OXIDE SEMICONDUCTORS.

Subject Categories : Computer Hardware
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE