Accession Number : ADP006687

Title :   PbTi03 Thin Films Grown by Organometallic Chemical Vapour Deposition,

Corporate Author : PHILIPS RESEARCH LABS EINDHOVEN (NETHERLANDS)

Personal Author(s) : Dormans, G. J. M. ; De Keijser, M. ; Larsen, P. K.

Report Date : 05 APR 1991

Pagination or Media Count : 14

Abstract : We have used organometallic chemical vapour deposition (OMCVD) to deposit ferroelectric PbTiO3 films on both single crystalline (001)SrTiO3 and oxidized Si substrates provided with a platinum electrode, using the precursors titanium-iso-propoxide and tetra-ethyl lead. Epitaxial PbTiO3 layers were grown on (001)SrTiO3 at temperatures around 700 V. The epitaxial nature of the c-axis oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry including channeling, x-ray diffraction (XRD) and high-resolution electron microscopy. A minimum channeling backscatter yield of - 3 % is obtained under optimal conditions. Polycrystalline PbTiO3 films have been deposited on the platinized Si substrates at temperatures between 400 deg C and 550 deg C. XRD shows that the films are of a single-phase perovskite-type structure. For a layer deposited at 400 deg C followed by an anneal at 700 deg C we measured an E, of - 100 kv/cm, an P, of - 55 AC/cm', and a switching time < 50 ns. This latter value was limited by the instrumental set-up.

Descriptors :   *LEAD TITANATES, *VAPOR DEPOSITION, BACKSCATTERING, ELECTRODES, ELECTRON MICROSCOPY, ELECTRONS, HIGH RESOLUTION, LAYERS, MICROSCOPY, PEROVSKITES, PHASE, PLATINUM, POLYCRYSTALLINE, PRECURSORS, RESOLUTION, SPECTROMETRY, STRUCTURES, SUBSTRATES, SWITCHING, TEMPERATURE, TIME, VALUE, YIELD, X RAY DIFFRACTION, SILICON, ANNEALING, NETHERLANDS.

Subject Categories : Industrial Chemistry and Chemical Processing
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE