Accession Number : ADP006689

Title :   Electrical Characteristics of Aluminum-Zirconium Oxide-barium Magnesium Fluoride-p Silicon MIS Capacitors,

Corporate Author : COLORADO UNIV AT COLORADO SPRINGS

Personal Author(s) : Kalkur, T. S. ; Kwor, R. Y. ; Levenson, L. ; Kammerdinner, L.

Report Date : 05 APR 1991

Pagination or Media Count : 10

Abstract : The Barium Magnesium Fluoride films have been deposit on p-Si wafers at a temperature in the range of 400-450 deg C in an ion assisted deposition system. X-ray diffraction analysis shows that the films are polycrystalline in nature. The BMF films were encapsulated with an electron be evaporated ZrO2 film of thickness 300 deg A. The capacitance-voltage (C-V) characteristics of Aluminum-ZrO2-BMF-p Si MIS capacitors show hysteresis and the direction of the hysteresis corresponds to ferroelectric polarization it the BMF film. The shift in threshold voltage was found to depend on bias voltage, ramp rate as well as measurement temperature.

Descriptors :   *CAPACITORS, *DEPOSITION, ALUMINUM, DIFFRACTION, DIFFRACTION ANALYSIS, ELECTRONS, FILMS, FLUORIDES, HYSTERESIS, IONS, POLYCRYSTALLINE, TEMPERATURE, THICKNESS, WAFERS, X RAY DIFFRACTION, BARIUM COMPOUNDS, MAGNESIUM COMPOUNDS, SILICON, ZIRCONIUM OXIDES, LAMINATES.

Subject Categories : Electricity and Magnetism
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE