Accession Number : ADP006691

Title :   Electrical Switching in Lithium Niobate Thin Films,

Corporate Author : RICE UNIV HOUSTON TX DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Rost, Timothy A. ; Lin, He ; Rabson, Thomas A.

Report Date : 05 APR 1991

Pagination or Media Count : 5

Abstract : The ferroelectric switching properties of thin films of lithium niobate (LiNbO3) on silicon have been investigated. The polarization is shown to be partially reversible with an applied electric field at room temperature. The samples were films of LiNbO3 which were magnetron sputter deposited on silicon substrates. A double pulse method was used to investigate the ferroelectric switching properties of the films. Evidence for partial stable switching of the LiNbO3 film was observed at a field of roughly 500 kV/cm.

Descriptors :   *FERROELECTRIC MATERIALS, *SWITCHING CIRCUITS, ELECTRIC FIELDS, FILMS, MAGNETRONS, POLARIZATION, PULSES, REVERSIBLE, ROOM TEMPERATURE, SILICON, SUBSTRATES, SWITCHING, TEMPERATURE, THIN FILMS, LITHIUM NIOBATES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE