Accession Number : ADP006694
Title : UHV Processing of Ferroelectric Barium Magnesium Fluoride Films and Devices,
Corporate Author : WESTINGHOUSE SCIENCE AND TECHNOLOGY CENTER PITTSBURGH PA
Personal Author(s) : Sinharoy, S. ; Lampe, D. R. ; Buhay, H. ; Francombe, M. H.
Report Date : 05 APR 1991
Pagination or Media Count : 910
Abstract : Barium magnesium fluoride (BaMgF4) has recently emerged as a strong candidate for application as the gate dielectric in ferroelectric random access memory (FERRAM) devices with nondestructive readout (NDRO). In earlier papers we reported the successful growth of oriented BaMgF4 films on Si(100) and other substrates in a ultrahigh vacuum (UHV) system, as well as the results of the structural and electrical characterization of these ferroelectric films. In the present paper, we review some of the earlier results, and also examine the effect of variations in the growth temperature and various post-growth anneals on the stoichiometry, crystallinity, orientation, and electrical characteristics of the BaMgF 4 films. Initial attempts at integrating the ferroelectric field-effect transistor (FEMFET) with the standard CMOS VLSIC processing, as well as the effect of adding a thin capping layer of SiO 2 on the BaMgF 4 will also be described.
Descriptors : *RANDOM ACCESS COMPUTER STORAGE, *FERROELECTRIC MATERIALS, ACCESS, CAPPING, DIELECTRICS, FILMS, LAYERS, PAPER, PROCESSING, STANDARDS, STOICHIOMETRY, SUBSTRATES, TEMPERATURE, VARIATIONS, MAGNESIUM COMPOUNDS, BARIUM COMPOUNDS, FIELD EFFECT TRANSISTORS, COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, VERY LARGE SCALE INTEGRATION.
Subject Categories : Electrical and Electronic Equipment
Ceramics, Refractories and Glass
Distribution Statement : APPROVED FOR PUBLIC RELEASE