Accession Number : ADP006701
Title : High-Order Diffraction in Photorefractive Quantum Well Structures,
Corporate Author : PURDUE UNIV LAFAYETTE IN DEPT OF PHYSICS
Personal Author(s) : Wang, Q. N. ; Nolte, D. D.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : Recently, the high speed of semiconductor materials was combined with the large optical nonlinearity of the Franz-Kelydish effect near the quantum confined exciton absorption within semi-insulating multiple quantum well structures (SIMQW). The diffraction efficiency of four wave mixing obtained in the SIMQW with an optical interaction length of 1.05 microns is comparable with the diffraction efficiency for a semiconductor bulk sample with an optical interaction length of several mm operating under similar conditions. Thus, SIMQW become a ideal candidate to study the diffraction process in the Raman-Nath regime. Here, we report two effects of the second order diffraction in a SIMQW sample under applied field: (1) the direct observation of a strong second order diffraction signal; (2) the intensity of the degenerate four wave mixing signal depends on the direction of applied field when the fringe spacing becomes large.
Descriptors : *DIFFRACTION, ABSORPTION, EXCITONS, INTENSITY, INTERACTIONS, LENGTH, MATERIALS, MIXING, OBSERVATION, SEMICONDUCTORS, SIGNALS, VELOCITY, NONLINEAR OPTICS, REFRACTIVE INDEX, GALLIUM ARSENIDES, SEMICONDUCTING FILMS, SHORT WAVELENGTHS, ELECTROOPTICS, TUNABLE LASERS, COHERENT OPTICAL RADIATION, SYMPOSIA.
Subject Categories : Optics
Distribution Statement : APPROVED FOR PUBLIC RELEASE