Accession Number : ADP006711

Title :   High Sensitivity Resonant Photorefractive Effect in Semi-Insulating CdZnTe/ZnTe Multiple Quantum Wells,

Corporate Author : AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s) : Partovi, A. ; Glass, A. M. ; Olson, D. H. ; Zydzik, G. J. ; Short, K. T.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Although the photorefractive sensitivity of the semiconductors is many orders of magnitude larger than the oxides, their small Pockels electro-optic coefficient has-been a serious drawback. By taking advantage of the quadratic effects near the band-edge, nonlinearity and sensitivity of semiconductor photorefractives can be dramatically improved. Recently, two-beam-coupling gain coefficients of 16.3/cm in gallium arsenides and 26.0/cm in indium phosphides have been reported near the band-edge. Quantum confinement of excitons in multiple quantum wells (MQWs) provides an additional enhancement of the resonant electro-optic nonlinearities. We have recently demonstrated how enhanced photorefractive sensitivity can be obtained in semi-insulting MQW devices. These devices were made semi-insulting through ion-implantation to provide sufficient density of traps for the photorefractive process as well as relieving the need for any pixelation.

Descriptors :   *SEMICONDUCTORS, *DIFFRACTION, AUGMENTATION, COEFFICIENTS, COUPLINGS, DENSITY, EDGES, EXCITONS, GAIN, IMPLANTATION, ION IMPLANTATION, IONS, OPTICS, OXIDES, SENSITIVITY, TRAPS, ELECTROOPTICS, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, RESONANCE, REFRACTION, SYMPOSIA.

Subject Categories : Optics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE