Accession Number : ADP006749
Title : Charge Transport in High-Resistivity Photorefractive Crystals (Bi sub 12 Sio sub 20 ZnSE GaAs),
Corporate Author : AKADEMIYA NAUK SSSR LENINGRAD FIZIKO-TEKHNICHESKII INSTITUT
Personal Author(s) : IIinskii, A. V.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : Introduction. The paper reviews our studies(l-7 concerned) of photoinduced charge dynamics and electric field evolution in the case of external field screening. The experimental methods providing possibility of electric field distribution direct measurements are considered. It is found that there are two different regimes of electric field screening which depend on experimental conditions (kind of crystal, temperature): narrowing of major carriers depletion region and stratification effect (numerous space charge layers of alternating sign) with increasing charge density - regime 1 and the slow broadening of single layer with constant charge density may occur in bulk, of a sample regime 2. These regimes were experimentally investigated in Bi12 Sio 20, ZnSe and GaAs crystals. A theoretical description is given of a sufficiently general charge transfer model involving the photogeneration of free carriers, their drift and trapping throughout the depth of the material.
Descriptors : *ELECTRIC FIELDS, CHARGE DENSITY, CHARGE TRANSFER, CRYSTALS, DENSITY, DEPLETION, DEPTH, DISTRIBUTION, DRIFT, EXTERNAL, LAYERS, MATERIALS, MEASUREMENT, MODELS, SPACE CHARGE, STRATIFICATION, TRANSFER, PHOTODETECTORS, REFRACTION.
Subject Categories : Optics
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE