Accession Number : ADP006977

Title :   1.48 Micrometers and 0.98 Micrometers High-Power Laser Diodes for Erbium-Doped Fiber Amplifiers,

Corporate Author : NEC CORP KAWASAKI (JAPAN)

Personal Author(s) : Mito, Ikuo ; Endo, Kenji

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : The development of erbium-doped fiber amplifiers has recently progressed rapidly. Highly efficient power conversion for 1.48um wavelength pumping enables a post-amplifier to achieve output power greater than lOOmW1). When pumped in 0.98um wavelength, the erbium-doped fiber amplifiers showed very low noise property'), which permits high receiver sensitivity as a preamplifier. High power laser diodes (LDs), operating at 1.48um and 0.98um wavelength, are essential as pumping light sources. Recently, multi-quantum well (MQW) structures have been employed as active layers for 1.48um wavelength LDs3). We have obtained the highest cw output power reported so far, 25OmW4). Lasing at 0.98um wavelength was achieved with InGaAs strained quantum well structures grown on GaAs substrates5). Low internal absorption loss helped these devices to emit 24OmW cw power6). This paper reports recent progress in the development of 1.48um and 0.98um wavelength high power LDs for erbium-doped fiber amplifiers.

Descriptors :   *AMPLIFIERS, ABSORPTION, CONVERSION, ERBIUM, FIBERS, HIGH POWER, INTERNAL, LASERS, LAYERS, LIGHT SOURCES, LOW NOISE, OUTPUT, POWER, PREAMPLIFIERS, PUMPING, RECEIVERS, SENSITIVITY, STRUCTURES, DIODES.

Subject Categories : Electrical and Electronic Equipment
      Fiber Optics and Integrated Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE