Accession Number : ADP006979

Title :   High-power Operation of 1.48 Micron GalnAsp/GalnAsP Strained-layer Multiple Quantum Well Lasers,

Corporate Author : SUMITOMO ELECTRIC INDUSTRIES LTD YOKOHAMA (JAPAN)

Personal Author(s) : Kamei, H. ; Yoshimura, M. ; Kobayashi, H. ; Tatoh, N. ; Hayashi, H.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : High-power semiconductor lasers emitting at 1.48um wavelength have been increasingly important as pumping light sources for Er3+-doped fiber amplifiers 1, 2. In this paper we report high power operation of 1.48 um GaInAsP/GaInAsP multiple quantum well (MQW) lasers which utilize strained-layer MQW structures as active layers.

Descriptors :   *AMPLIFIERS, *SEMICONDUCTOR LASERS, FIBERS, HIGH POWER, LASERS, LAYERS, LIGHT SOURCES, OPERATION, PAPER, POWER, PUMPING, STRUCTURES, DIODES.

Subject Categories : Electrical and Electronic Equipment
      Fiber Optics and Integrated Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE