Accession Number : ADP006981

Title :   High Power 980 nm Ridge Waveguide Laser in Single Mode Fiber Coupled Package,

Corporate Author : EG AND G CANADA LTD VAUDREUIL (QUEBEC) OPTOELECTRONICS DIV

Personal Author(s) : Murison, Richard F. ; Lee, Shuyen R. ; Holehouse, Nigel ; Righetti, Aldo ; Grasso, Giorgio

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Rapid progress in strained quantum well InGaAs/AlGaAs laser diodes has led to the wide acceptance of 980 nm diodes as potential pump sources for Er3+-doped fiber amplifiers (EDFA). In particular, ridge waveguides have proven to be ideal structures for such devices (1,21) promising ease of manufacture, and potentially high reliability. In this paper, we report high coupled power from ridge waveguide lasers into large NA single-mode fiber designed for use in EDFA systems, using an industry-standard 14-pin DIL package outline. We also report systems performance obtained using these lasers as the pump source in a broad-band EDFA power amplifier. The epitaxial structure is a graded-index separate confinement heterostructure, grown in a low pressure MOCVD reactor. A single quantum well was employed, using a strained InGaAs layer whose composition and thickness were engineered to provide lasing at a wavelength of 980 nm. The threshold current density, measured on a 50 Jim oxide stripe structure with 500 um cavity length, was 272Acm-2.

Descriptors :   *LASERS, *WAVEGUIDES, AMPLIFIERS, CAVITIES, CURRENT DENSITY, DENSITY, DIODES, FIBERS, INDEXES, INDUSTRIES, LAYERS, LENGTH, LOW PRESSURE, OXIDES, PINS, POWER AMPLIFIERS, PRESSURE, PUMPS, RIDGES, STANDARDS, STRIPES, STRUCTURES, THICKNESS.

Subject Categories : Lasers and Masers
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE