Accession Number : ADP007415
Title : Low-Threshold Optical Bistability in Bulk GaAs Etalons,
Corporate Author : NEUCHATEL UNIV (SWITZERLAND)
Personal Author(s) : Acklin, B. ; Bagnoud, C.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : A nonlinear Fabry-Perot device with a 2 um bulk GaAs spacer has been optimized numerically. A corresponding sample, grown by molecular beam epitaxy, exhibits thermally stable switching with contrasts of 8:1 and thresholds as low as 1 mW. Besides the switching behavior, we present measurements of the dependence of switching threshold and contrast on spotsize and wavelength detuning.
Descriptors : *OPTICAL SWITCHING, *OPTICAL INTERFEROMETERS, CONTRAST, MEASUREMENT, MOLECULAR BEAMS, SPACERS, SWITZERLAND, EPITAXIAL GROWTH, GALLIUM ARSENIDES, NONLINEAR SYSTEMS.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE